copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 features high ruggedness r ds( on ) (max8.5 ? )@v gs =10v gate charge (typical 6.8 nc) improved dv/dt capability 100% avalanche tested n - channel i - pak/to - 92 mosfet absolute maximum ratings thermal characteristics symbol parameter value unit to - 251 to - 92 r thjc thermal resistance, junction to case 1.9 30.1 o c/w r th jcs thermal resistance, case to sink o c/w r thja thermal resistance, junction to ambient 90 113.5 o c /w 1/6 bv dss : 600v i d : 1a r ds(on) :8.5 1 2 3 SW1N60D samwin item sales type marking package packaging 1 sw i 1n60 SW1N60D to - 251 tube 2 sw c 1n60 SW1N60D to - 92 tape order codes symbol parameter value unit to - 251 to - 92 v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 1* a continuous drain current (@t c =100 o c) 0.6* a i dm drain current pulsed (note 1) 4 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 68 mj e ar repetitive avalanche energy (note 1) 8 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 65.9 4.2 w derating factor above 25 o c 0.53 0.03 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics . this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply . *. drain current is limited by junction temperature. 1. gate 2. drain 3. source 1 2 3 to - 251 to - 92 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.51 v/ o c i dss drain to source leakage current v ds =600v, v gs =0v 1 ua v ds =480v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na v gs = - 30v, v ds =0v - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.5 4.5 v r ds(on) drain to source on state resistance v gs =10v, i d = 0.5a 6.6 8.5 ? g fs forward transconductance v ds = 30 v, i d = 0.5a 0.9 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 150 pf c oss output capacitance 28 c rss reverse transfer capacitance 9 t d(on) turn on delay time v ds =300v, i d =1a r g =25? (note 4 5 ) 5 ns tr rising time 20 t d(off) turn off delay time 12 t f fall time 23 q g total gate charge v ds =480v, v gs =10v, i d =1a (note 4 5 ) 6.8 nc q gs gate - source charge 1.3 q gd gate - drain charge 3.7 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 1 a i sm pulsed source current 4 a v sd diode forward voltage drop. i s =1a, v gs =0v 1.5 v t rr reverse recovery time i s =1a, v gs =0v, di f /dt=100a/us 174 ns q rr reverse recovery charge 1139 n c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 135mh, i as = 1a, v dd = 25v, r g =25?, starting t j = 25 o c 3. i sd 1a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. samwin 2/6 SW1N60D
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics 3/6 samwin SW1N60D fig. 6. on resistance variation vs. junction temperature fig 5. breakdown voltage variation vs. junction temperature fig. 4. on state current vs. diode forward voltage
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 4/6 samwin SW1N60D fig. 7. maximum safe operating area(to - 251) fig. 8. transient thermal response curve(to - 251) fig. 9. maximum safe operating area(to - 92) fig. 10. transient thermal response curve(to - 92) fig. 11. c apacitance characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/6 samwin SW1N60D v ds same type as dut dut v gs 0.2ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd samwin 6/6 SW1N60D
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